- Capability group
- Semiconductors & Advanced Computing
- Domain
- Critical Technology · Hard Power
- Identifier
- factbase.org/cap/H4YJ782F1R
- Reference
- Wide-bandgap semiconductor Wikipedia
Papers
27.7k
2020–2024
Paper growth
+11%
2020–24 on 2015–19
Patent families
26.3k
2020–2024
Filed abroad
42%
families in more than one office
What it covers
What the capability covers and what it leaves to others, and the indicators it will be measured by.
Bounds
Covers compound and power device technology; its applications read under the energy, connectivity and defence capabilities, and its materials base is shared with the materials group.
Lineage
Relocated in v0.1 from the materials group (formerly Wide and ultrawide bandgap semiconductors) at the same level, carrying its identifier under the relocation convention: the node is a semiconductor device family and belongs with its value chain.
Indicators
- wide-bandgap device production sharePending
- power semiconductor revenue sharePending
- compound wafer capacityPending
Who publishes it
Papers classified to the capability, by year and by the nation of their authors' institutions, 2020–2024. Read from the v0.0 research topic Wide and ultrawide bandgap semiconductors.
Papers by year
The five leading nations, papers by year
Share of papers, 2020–2024
Of papers with a known author nation; 22% have none and are left out.
- 1China27.4%7,286 papers
- 2United States15.2%4,058 papers
- 3Japan7.9%2,104 papers
- 4India6.3%1,665 papers
- 5Germany4.3%1,141 papers
- 6South Korea3.4%902 papers
- 7United Kingdom3.0%792 papers
- 8Taiwan2.8%748 papers
- 9France2.5%673 papers
- 10Italy2.4%652 papers
Leading institutions, 2020–2024
By fractional count: each paper divided among its authors' institutions.
- 1Xidian University430fractional papers
- 2Chinese Academy of Sciences251fractional papers
- 3Zhejiang University199fractional papers
- 4The Ohio State University175fractional papers
- 5National Yang Ming Chiao Tung University169fractional papers
- 6University of Electronic Science and Technology of China164fractional papers
- 7Xi'an Jiaotong University156fractional papers
- 8University of Science and Technology of China148fractional papers
- 9Nagoya University140fractional papers
- 10Shandong University136fractional papers
Who patents it
Patent families by the nation of origin of their applicants and their earliest priority year, from the CPC and IPC classes the capability is read from. 2025 onwards is incomplete: families are published 18 months after priority.
Families by priority year
The five leading origins, families by year
3,833 applicants filed here in 2015–2024; the five largest held 19% of families (HHI 118 of 10,000: unconcentrated).
Share of families by origin, 2020–2024
- 1China50.1%13,165 families
- 2Japan17.8%4,664 families
- 3Taiwan9.8%2,581 families
- 4United States8.9%2,347 families
- 5South Korea6.5%1,710 families
- 6Germany2.0%513 families
- 7Austria0.8%213 families
- 8Switzerland0.7%195 families
- 9France0.7%182 families
- 10Netherlands0.5%125 families
Applicants filing most internationally, 2015–2024
Families filed in more than one office, by applicant as the offices name them.
- 1TAIWAN SEMICONDUCTOR MFG CO LTD1,800international families
- 2TOSHIBA KK1,058international families
- 3SAMSUNG ELECTRONICS CO LTD1,012international families
- 4TOSHIBA CORP1,008international families
- 5FUJI ELECTRIC CO LTD981international families
- 6MITSUBISHI ELECTRIC CORP736international families
- 7TOSHIBA ELECTRONIC DEVICES & STORAGE CORP652international families
- 8INTEL CORP576international families
- 9TAIWAN SEMICONDUCTOR MFG545international families
- 10ROHM CO LTD528international families
Classification read
- H10D62/85 Group III-V semiconductor bodies, e.g. gallium nitride, gallium arsenide · 89.3k documents
- H10D62/8325 Silicon carbide device bodies · 53k documents
- H10D62/8303 Diamond device bodies · 6.7k documents
- H10D62/82 Heterojunction device bodies · 56.8k documents
- H10D30/47 High-electron-mobility transistors · 86k documents
- H10D12/00 Insulated-gate bipolar transistors · 121.4k documents
- H10D30/64 Power DMOS transistors · 118k documents
- H10D8/60 Schottky diodes · 28.6k documents
- H10D18/00 Thyristors · 20.9k documents
- C30B29/36 Silicon carbide and other carbide crystals · 18.2k documents
- C30B29/38 Nitride crystals · 5k documents
- C30B29/40 Group III-V compound crystals · 36.1k documents
Shares inventions with
Capabilities whose classes the same families also fall in, by overlap (Jaccard).
- Advanced Semiconductor Fabrication17,261 families · 0.121
- Nanomaterials & Metamaterials2,008 families · 0.045
- Advanced Packaging & Heterogeneous Integration3,648 families · 0.036
- Semiconductor Equipment & Materials3,097 families · 0.027
- Semiconductor Design & EDA340 families · 0.012
Who makes it
The companies that research, design, make, supply and operate the technology, the global leaders and the leading firms of every region.
50 companies in this capability, from 20 nations across 6 regions. Sorted by how experts see each company's global relevance in the field, from very high to very low.
- Very high3 companies
- 1Very highComponents & subsystemsNeubibergGermany199958kIFX
World's largest power semiconductor supplier, producing silicon IGBTs/MOSFETs, CoolSiC silicon-carbide devices and CoolGaN (after acquiring GaN Systems in 2023), with a 200mm SiC fab in Kulim, Malaysia.
Very high relevance · Components & subsystems · Germany, Neubiberg · founded 1999 · 58k staff
- 2Very highComponents & subsystemsScottsdaleUnited States199926kON
Vertically integrated SiC producer (from boule growth in New Hampshire to EliteSiC MOSFETs and modules) and a leading supplier of automotive power devices, with a SiC expansion in Rožnov, Czech Republic.
Very high relevance · Components & subsystems · United States, Scottsdale · founded 1999 · 26k staff
- 3Very highComponents & subsystemsGenevaSwitzerland198750kSTM
Leading SiC MOSFET supplier (main supplier to Tesla's traction inverters), building an integrated SiC campus in Catania, Italy, and a 200mm SiC joint venture with San'an in Chongqing, alongside a GaN power line.
Very high relevance · Components & subsystems · Switzerland, Geneva · founded 1987 · 50k staff
- High7 companies
- 4HighAdvanced materialsDurhamUnited States1987–WOLF
Largest merchant supplier of SiC substrates and operator of the world's first 200mm SiC device fab (Mohawk Valley, NY); it restructured through Chapter 11 in 2025 and emerged with new equity.
High relevance · Advanced materials · United States, Durham · founded 1987
- 5HighHardware & devicesTokyoJapan1921150k6503
Leading supplier of IGBT and SiC power modules for rail, industrial and EV use, and of GaN/GaAs high-frequency devices; it is building an 8-inch SiC fab in Kumamoto.
High relevance · Hardware & devices · Japan, Tokyo · founded 1921 · 150k staff
- 6HighComponents & subsystemsKyotoJapan195823k6963
Vertically integrated SiC maker through its German subsidiary SiCrystal (substrates) and its Miyazaki fabs; it pioneered mass-produced SiC MOSFETs and supplies GaN EcoGaN devices.
High relevance · Components & subsystems · Japan, Kyoto · founded 1958 · 23k staff
- 7HighComponents & subsystemsTokyoJapan192327k6504
Major producer of IGBT and SiC power modules for EVs, industry and renewables, and one of the top international patent filers in power devices.
High relevance · Components & subsystems · Japan, Tokyo · founded 1923 · 27k staff
- 8HighComponents & subsystemsGreensboroUnited States20158,700QRVO
Leading GaAs and GaN-on-SiC RF device maker and a DoD Trusted foundry (Richardson, Texas) for defence radar MMICs; a merger with Skyworks was announced in 2025.
High relevance · Components & subsystems · United States, Greensboro · founded 2015 · 8,700 staff
- 9HighComponents & subsystemsSaxonburgUnited States197126kCOHR
Second-largest SiC substrate and epiwafer supplier (ex-II-VI) with 200mm production; its SiC business is backed by Denso and Mitsubishi Electric investment, and it also makes InP and GaAs compound devices.
High relevance · Components & subsystems · United States, Saxonburg · founded 1971 · 26k staff
- 10HighAdvanced materialsJinanChina2010–688234
SICC (Shandong Tianyue Advanced Technology)One of the world's top two or three SiC substrate makers by share, supplying conductive 6/8-inch wafers to Infineon and Bosch; it has an additional Hong Kong listing.
High relevance · Advanced materials · China, Jinan · founded 2010
- Moderate23 companies
- 11ModerateHardware & devicesKawasakiJapan1875105kPrivate
Through Toshiba Electronic Devices & Storage it is a top power MOSFET/IGBT and SiC supplier, building a 300mm power fab in Ishikawa and collaborating with ROHM on power devices; it has been privately owned since its 2023 buyout.
Moderate relevance · Hardware & devices · Japan, Kawasaki · founded 1875 · 105k staff
- 12ModerateComponents & subsystemsXiamenChina2000–600703
China's largest compound semiconductor manufacturer (GaN/GaAs LEDs, RF and power) whose Hunan San'an unit runs a vertically integrated SiC line and a Chongqing 200mm SiC JV with STMicroelectronics.
Moderate relevance · Components & subsystems · China, Xiamen · founded 2000
- 13ModerateComponents & subsystemsIrvineUnited States200210kSWKS
Major GaAs HBT/pHEMT RF front-end producer with its own GaAs fab in Woburn, Massachusetts; a merger with Qorvo was announced in October 2025.
Moderate relevance · Components & subsystems · United States, Irvine · founded 2002 · 10k staff
- 14ModerateComponents & subsystemsZhuzhouChina2005–688187
China's leading high-voltage IGBT and SiC module maker (ex-Dynex technology, 8-inch IGBT lines) for rail traction, grid and EVs; it is part of state-owned CRRC and also listed in Hong Kong (3898).
Moderate relevance · Components & subsystems · China, Zhuzhou · founded 2005
- 15ModerateComponents & subsystemsZhuhaiChina2015–2577
World's largest GaN-on-silicon power device IDM by volume, running 8-inch GaN fabs in Zhuhai and Suzhou; it has a 2025 manufacturing partnership with STMicroelectronics.
Moderate relevance · Components & subsystems · China, Zhuhai · founded 2015
- 16ModerateDesignTorranceUnited States2014–NVTS
Pure-play GaNFast and GeneSiC power device designer, partnered with Nvidia on 800V data-centre power architectures.
Moderate relevance · Design · United States, Torrance · founded 2014
- 17ModerateComponents & subsystemsTokyoJapan200221k6723
Acquired GaN pioneer Transphorm in 2024, adding high-voltage GaN FETs to its silicon IGBT and power MOSFET portfolio.
Moderate relevance · Components & subsystems · Japan, Tokyo · founded 2002 · 21k staff
- 18ModerateComponents & subsystemsSan JoseUnited States1988–POWI
High-volume supplier of GaN-based (PowiGaN) offline power-conversion ICs and 1700V GaN switches for chargers, appliances and industrial supplies.
Moderate relevance · Components & subsystems · United States, San Jose · founded 1988
- 19ModerateComponents & subsystemsGerlingenGermany1886418kPrivate
Makes SiC MOSFETs for EV inverters at its Reutlingen fab and is converting its acquired Roseville, California fab to 200mm SiC production.
Moderate relevance · Components & subsystems · Germany, Gerlingen · founded 1886 · 418k staff
- 20ModerateHardware & devicesZurichSwitzerland202050kPrivate
Produces high-power IGBTs, thyristors and SiC modules (ex-ABB Semiconductors, Lenzburg) for HVDC, rail and grid; it is a subsidiary of Hitachi Ltd.
Moderate relevance · Hardware & devices · Switzerland, Zurich · founded 2020 · 50k staff
- 21ModerateComponents & subsystemsChicagoUnited States192716kLFUS
Supplies IXYS power semiconductors (IGBTs, thyristors, SiC MOSFETs and diodes) for industrial and transport power conversion.
Moderate relevance · Components & subsystems · United States, Chicago · founded 1927 · 16k staff
- 22ModerateComponents & subsystemsLowellUnited States1950–MTSI
GaN-on-SiC and GaAs RF and InP optical device maker that bought Wolfspeed's RF business in 2023, including its GaN fab in North Carolina.
Moderate relevance · Components & subsystems · United States, Lowell · founded 1950
- 23ModerateComponents & subsystemsNurembergGermany2022–Private
Leading independent power module maker (IGBT and SiC) for industrial drives, renewables and EV inverters, formed from the merger of Semikron and Danfoss Silicon Power.
Moderate relevance · Components & subsystems · Germany, Nuremberg · founded 2022
- 24ModerateAdvanced materialsBerninFrance1992–SOI
Engineered-substrate maker producing SmartSiC bonded polySiC wafers and GaN substrates alongside its RF-SOI wafers.
Moderate relevance · Advanced materials · France, Bernin · founded 1992
- 25ModerateEquipment & machineryHerzogenrathGermany1983–AIXA
Dominant supplier of MOCVD and SiC epitaxy reactors (G5+ C, G10-SiC, G10-GaN) used by compound semiconductor fabs worldwide.
Moderate relevance · Equipment & machinery · Germany, Herzogenrath · founded 1983
- 26ModerateContract manufacturingTaoyuanTaiwan1999–3105
World's largest pure-play GaAs foundry, also offering GaN-on-SiC HEMT processes for RF and 5G customers.
Moderate relevance · Contract manufacturing · Taiwan, Taoyuan · founded 1999
- 27ModerateComponents & subsystemsJiaxingChina2005–603290
China's largest IGBT module supplier for EVs and industry, expanding into its own SiC chip fabrication.
Moderate relevance · Components & subsystems · China, Jiaxing · founded 2005
- 28ModerateComponents & subsystemsShenzhenChina2004–Private
BYD's in-house power chip arm producing IGBT and SiC MOSFET modules for BYD's EVs, among the largest automotive IGBT suppliers in China; it is a subsidiary of BYD Co.
Moderate relevance · Components & subsystems · China, Shenzhen · founded 2004
- 29ModerateComponents & subsystemsOsakaJapan1897–5802
Leading GaN-on-SiC HEMT supplier for base stations (via Sumitomo Electric Device Innovations) and producer of GaAs/InP substrates and SiC epitaxial wafers.
Moderate relevance · Components & subsystems · Japan, Osaka · founded 1897
- 30ModerateChemicals & gasesTokyoJapan1939–4004
World's largest merchant SiC epitaxial wafer supplier (ex-Showa Denko), with long-term contracts with Infineon and ROHM; it also makes SiC substrates.
Moderate relevance · Chemicals & gases · Japan, Tokyo · founded 1939
- 31ModerateComponents & subsystemsChandlerUnited States198919kMCHP
Supplies mSiC MOSFETs, diodes and power modules (from Microsemi) for aerospace, defence and industrial power, as well as GaN RF devices.
Moderate relevance · Components & subsystems · United States, Chandler · founded 1989 · 19k staff
- 32ModerateComponents & subsystemsNijmegenNetherlands2017–Private
High-volume discrete and power MOSFET maker with GaN FET and SiC product lines; it is owned by China's Wingtech, and the Dutch government took control measures in 2025.
Moderate relevance · Components & subsystems · Netherlands, Nijmegen · founded 2017
- 33ModerateAdvanced materialsCardiffUnited Kingdom1988–IQE
World's largest outsourced compound semiconductor epiwafer supplier (GaAs, InP, GaN-on-Si/SiC) for RF, photonics and power.
Moderate relevance · Advanced materials · United Kingdom, Cardiff · founded 1988
- Low8 companies
- 34LowAdvanced materialsBeijingChina2006–Private
Major Chinese SiC substrate producer (conductive 6/8-inch wafers) with long-term supply deals with Infineon.
Low relevance · Advanced materials · China, Beijing · founded 2006
- 35LowAdvanced materialsGumiSouth Korea1983–Private
Through SK siltron css (Auburn and Bay City, Michigan, ex-DuPont) it produces SiC wafers, backed by a US DOE loan; it is a subsidiary of SK Group.
Low relevance · Advanced materials · South Korea, Gumi · founded 1983
- 36LowComponents & subsystemsWuxiChina1983–688396China Resources Microelectronics
State-backed power semiconductor IDM producing MOSFETs, IGBTs and SiC/GaN devices, with a 12-inch power fab in Shenzhen.
Low relevance · Components & subsystems · China, Wuxi · founded 1983
- 37LowContract manufacturingTessenderloBelgium1992–XFAB
Leading open SiC foundry (Lubbock, Texas, 6-inch SiC) and provider of GaN-on-Si foundry processes for fabless power device companies.
Low relevance · Contract manufacturing · Belgium, Tessenderlo · founded 1992
- 38LowDesignEl SegundoUnited States2007–Private
Efficient Power Conversion (EPC)Pioneer of enhancement-mode eGaN power FETs and ICs for lidar, DC-DC conversion, motor drives and space; it holds a key GaN patent portfolio.
Low relevance · Design · United States, El Segundo · founded 2007
- 39LowComponents & subsystemsAnyangSouth Korea1999–218410
South Korea's leading GaN-on-SiC RF transistor and amplifier maker for telecom base stations and defence radar.
Low relevance · Components & subsystems · South Korea, Anyang · founded 1999
- 40LowSystems integrationAnkaraTürkiye197511kASELS
Türkiye's defence electronics champion, whose AB MikroNano GaN foundry with Bilkent University (operating since 2017) produces GaN transistors and MMICs for its radar and EW systems.
Low relevance · Systems integration · Türkiye, Ankara · founded 1975 · 11k staff
- 41LowComponents & subsystemsHaifaIsrael1977–State-owned
Israel's compound semiconductor producer of InSb, InGaAs and type-II superlattice infrared detectors and laser diodes; it is owned by Elbit Systems and state-owned Rafael.
Low relevance · Components & subsystems · Israel, Haifa · founded 1977
- Very low9 companies
- 42Very lowComponents & subsystemsOżarów MazowieckiPoland1987–VGO
Poland's compound semiconductor maker: III-V epitaxy (InAs/GaSb, GaAs, GaN) and MCT/III-V infrared detectors, with an EU IPCEI-backed III-V epi expansion.
Very low relevance · Components & subsystems · Poland, Ożarów Mazowiecki · founded 1987
- 43Very lowContract manufacturingKulimMalaysia1995–Private
Malaysian foundry (majority owned by Dagang NeXchange with Khazanah) running 200mm GaN-on-Si power process development with IGSS GaN alongside its CMOS and BCD power processes.
Very low relevance · Contract manufacturing · Malaysia, Kulim · founded 1995
- 44Very lowContract manufacturingPenangMalaysia2010–0166
Malaysian OSAT that assembles and tests RF front-end and optoelectronic compound semiconductor modules, mainly for Broadcom.
Very low relevance · Contract manufacturing · Malaysia, Penang · founded 2010
- 45Very lowAdvanced materialsSingaporeSingapore2014––
Singapore GaN-on-Si/SiC epiwafer and 200mm GaN process company that set up a MOCVD Epi Centre (about US$73M) and offers GaN MPW shuttles with SilTerra.
Very low relevance · Advanced materials · Singapore, Singapore · founded 2014
- 46Very lowDesignBrisbaneAustralia2006–Private
Australian power IC designer of GaN-ready power-conversion controllers and UV-C AlN/AlGaN wide-bandgap emitters.
Very low relevance · Design · Australia, Brisbane · founded 2006
- 47Very lowComponents & subsystemsSydneyAustralia2005–BLG
Developer and maker of GaN laser diodes using its low-temperature remote-plasma CVD process, with a fab in Silicon Valley.
Very low relevance · Components & subsystems · Australia, Sydney · founded 2005
- 48Very lowAdvanced materialsLinkopingSweden2014––
Supplies buffer-free QuanFINE GaN-on-SiC epiwafers (up to 150mm) for RF, defence and power devices, spun out of Linköping University.
Very low relevance · Advanced materials · Sweden, Linkoping · founded 2014
- 49Very lowComponents & subsystemsVilniusLithuania2011–Private
Lithuanian III-V (GaSb/InP) epitaxy and laser chip maker producing mid-infrared lasers for defence and sensing.
Very low relevance · Components & subsystems · Lithuania, Vilnius · founded 2011
- 50Very lowComponents & subsystemsBhubaneswarIndia2023––
Archean Chemical subsidiary building India's first end-to-end SiC device fab in Odisha with Clas-SiC (UK) technology; it broke ground in November 2025, gained state approval in September 2026 and targets 2027-28 operation.
Very low relevance · Components & subsystems · India, Bhubaneswar · founded 2023
